| PART |
Description |
Maker |
| MRF10120 |
Microwave Long Pulse Power Silicon NPN Transistor 120W (peak), 960-1215MHz
|
M/A-COM Technology Solutions, Inc.
|
| PE-65502X PE-62252A PE-5163X PE-5160X PE-65457 PE- |
LONG BBL 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
2 Watt Pulse Electrostatically Shielded, 500 mW Pulse, RF Pulse and Control Transformers 2瓦特脉冲静电屏蔽00毫瓦的脉冲，射频脉冲和控制变压器
POT 20K OHM 9MM HORZ MET BUSHING
|
List of Unclassifed Manufacturers
Electronic Theatre Controls, Inc.
ETC[ETC]
|
| AFS1-00120025-10-13P-4 AFS2-21202400-35-5P-2 AFS4- |
120 MHz - 250 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
21200 MHz - 24000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
500 MHz - 1000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
6000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 10000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
13200 MHz - 14000 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
7300 MHz - 8400 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| SIM2-1515S-SIL7 SIM2-1515D-SIL7 SIM2-1512S-SIL7 SI |
2 W DC/DC SIM-SIL module with 5 V input, 12 V/166 mA output
2 W DC/DC SIM-SIL module with 05 V input, 12 V/82 mA output
2 W DC/DC SIM-SIL module with 5 V input, 5 V/400 mA output
From old datasheet system
FERRITE EMI PLATE 15MMX15MMX2MM
PT 39C 2#16,37#20 PIN PLUG
71-146620-39P
FERRITE EMI PLATE 13MMX13MMX2MM
FERRITE EMI PLATE 21MMX15MMX2MM 2瓦特超微缩南港岛线模件系
2 Watt Ultra-Miniatur SIL-Modul-Series 2瓦特超微缩南港岛线模件系
|
HN Electronic Components
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-0 |
4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
|
MITEQ, Inc.
MITEQ INC
|
| SIL24-1A75-71M SIL24-1A75-71MDE |
SIL Reed Relays
(deutsch) SIL Reed Relay
|
Meder Electronic
|
| MWA02011L MWA0204 MWA0270 MWA0211L |
I(cc): 40mA; P(in): -16 dB; V(cc): 6V; monolithic microwave integrated circuit
MONOLITHIC MICROWAVE INTEGRATED CIRCUIT 3000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
(MWA02011L / MWA0204 / MWA0270) MONOLITHIC MICROWAVE INTEGRATED CIRCUIT
|
Motorola Mobility Holdings, Inc.
Motorola, Inc.
|
| 30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A |
258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| AFS3-00101200-35-ULN AFS3-00100600-20-ULN AFS3-020 |
100 MHz - 12000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
2700 MHz - 3100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
100 MHz - 500 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| AMIS42675ICAH2G AMIS42675ICAH2RG AMIS-42675 AMIS42 |
High Speed Low Power CANTransceiver for Long Wire
High Speed Low Power CAN Transceiver for Long Wire Networks
|
ON Semiconductor
|
| LWA6SG-V1AA-5K8L LWA6SG |
Hyper SIDELED? long life Enhanced optical Power LED (ThinGaN?)
Hyper SIDELED㈢ long life Enhanced optical Power LED (ThinGaN㈢)
|
OSRAM GmbH
|
